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Generation of Coherent Extreme Ultraviolet Radiation in an Air Gas Cell with a High Power Femtosecond Laser System
(Springer, 2021)
High harmonic generation (HHG) in air medium is experimentally produced by using a state-ofthe-art high power laser system. The harmonic orders up to 35th harmonic are well observed. Optical power
dependence of harmonic ...
Generation of even and odd harmonics in the XUV region with controlling the relative delay and polarization of two-color fields
(Elsevier, 2021)
We report high harmonic generation in the extreme ultraviolet (XUV) region by using two-color
laser fields at the wavelengths of 800 nm and 400 nm. With a Ti: sapphire femtosecond laser at a
10 Hz repetition rate efficient ...
Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields
(Springer, 2021)
In this paper, the efects of external electric, magnetic and non-resonant intense laser felds
on the nonlinear optical rectifcation (NOR), second-harmonic (SH), and third harmonic
(TH) generation in a GaAs quantum well ...
Influence of hydrostatic pressure, temperature, and terahertz laser field on the electron-related optical responses in an asymmetric double quantum well
(Springer, 2021)
In this study, the effects of hydrostatic pressure, temperature, and high-frequency intense laser
field on the nonlinear optical properties of an asymmetric GaAs/AlGaAs double quantum well was theoretically investigated. ...
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)
Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate
InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While
all other sources ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.07.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...