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Toplam kayıt 2, listelenen: 1-2
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(5.01.2022)
The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High
indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted
for ...
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(10.12.2022)
Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration
grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution
X-ray ...