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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and
silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...