Search
Now showing items 1-3 of 3
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and
silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ...
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
(22.06.2023)
Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function
of biological neurons. They are particularly well-suited for tasks such as image and speech ...