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Toplam kayıt 2, listelenen: 1-2
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(26.06.2022)
AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ...
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)
teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ...