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Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)
In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness
was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural
and optical ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...