Nanoteknoloji Mühendisliği Bölümü: Recent submissions
Now showing items 21-40 of 82
-
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Comparison of Particle Shape, Surface Area, and Color Properties of the Calcite Particles Ground by Stirred and Ball Mill
(2023)Since the particle size, shape, specific surface area, and purity of the ground calcium carbonate (GCC) decide its usability in the paper, paint, and plastic industries, the effect of grinding is important. However, the ... -
High harmonic generations triggered by the intense laser field in GaAs/ AlxGa1-xAs honeycomb quantum well wires
(Elsevier, 2023)Under constant electric and magnetic fields, the potential profile of the honeycomb quantum well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high harmonics (nonlinear optical rectification, ... -
High harmonic generations in GaAs/AlGaAs superlattice: Effect of electric and magnetic field
(Elsevier, 2023)In this study, we have examined the nonlinear optical rectification (NOR), the second harmonic generation (SHG), and the third harmonic generation (THG) coefficients of the AlxGa1-xAs/GaAs superlattice with a periodically ... -
Yakın Kızıl Ötesi Spektrumu Sogurucu Optik Filtre Gelistirilmesi
(TUBITAK, 2023)Güneş ısısını soğuran ve birçok optik uygulama için yakın kızılötesi (NIR) soğuruculuğu olan materyallerin geliştirilmesi güneş enerjisi uygulamaları yanında 1064 nm dalgaboylu lazer ışınını soğurması niteliği ile savunma ... -
The effect of structure parameters and static electric field on the nonlinear optical properties of triple InGaAs/GaAs quantum well
(ScienceDirect, 2023)Optical properties of In x Ga 1-x As/GaAs triple QW are studied for different quantum well thicknesses and external electric fields. The effective mass approximation is used to calculate the band alignment of the structure. ... -
Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure
(Springer, 2023)The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted ... -
Prediction of average shape values of quartz particles by vibrating disc and ball milling using dynamic image analysis based on established time-dependent shape models
(2022)Although grinding kinetics has been the subject of many researches, there is no research examining the shape kinetics of particles ground by different mills using dynamic image analysis (DIA) in the literature. In this ... -
Linear and nonlinear optical properties of a superlattice with periodically increased well width under electric and magnetic fields
(Elsevier, 14.04.2022)In this paper, we have studied the electronic and optical properties of GaAs/AlxGa1-xAs superlattice with periodically increased well width. Under effective mass approximation, the finite element method is used to obtain ... -
Intense laser field effect on the nonlinear optical properties of triple quantum wells consisting of parabolic and inverse-parabolic quantum wells
(IOP Publishing, 25.02.2022)The nonlinear optical rectification, the second harmonic generation coefficient, and the third harmonic generation coefficient in parabolic-inverse parabolic-parabolic quantum wells (PIPPQWs) and inverse parabolic-para ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(26.06.2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
(3.09.2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(3.06.2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(5.01.2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for ... -
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(10.12.2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
(19.05.2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
(24.08.2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ...