Nanoteknoloji Mühendisliği Bölümü: Recent submissions
Now showing items 61-80 of 82
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Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ... -
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
(15.11.2021)We are presenting a theoretical investigation on the effects of applied electric, magnetic, and non-resonant intense laser field on the coefficients of intersubband linear, third-order nonlinear, and total optical ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ... -
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters
(26.07.2021)In this work, we present a theoretical simulation of the impact of applied external fields and structural parameters on the total (linear plus nonlinear) optical absorption coefficient (TOAC) and total refractive relative ... -
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.07.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
(6.11.2021)In the present study, the nonlinear optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with exponentially confinement potential ... -
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ... -
Vcsel tabanlı yüksek güçlü yarı iletken lazerler
(15.01.2021)VCSEL’ler (vertical-cavity surface-emitting laser, düşey- kovuklu yüzey-ışımalı lazer) yirmi yılı aşkın bir süredir giderek gelişen veri iletişimi (datacom) alanının anahtar bileşenlerinden birisidir. Bunun yanında son ... -
Computation of Atomic Dipole Spectra for Different Atoms by Considering Short and Long Electron Trajectories under the Intense Laser Pulse
(9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM, 2021)In this work, computation of the nonlinear dipole response of a single atom is performed by considering the ionization of the electron under the intense laser field. The dipole spectra for xenon (Xe) and argon (Ar) gases ... -
Generation of even and odd harmonics in the XUV region with controlling the relative delay and polarization of two-color fields
(Elsevier, 2021)We report high harmonic generation in the extreme ultraviolet (XUV) region by using two-color laser fields at the wavelengths of 800 nm and 400 nm. With a Ti: sapphire femtosecond laser at a 10 Hz repetition rate efficient ... -
Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields
(Springer, 2021)In this paper, the efects of external electric, magnetic and non-resonant intense laser felds on the nonlinear optical rectifcation (NOR), second-harmonic (SH), and third harmonic (TH) generation in a GaAs quantum well ... -
Effect of Ultrashort Laser Pulse Shape on the Dipole Spectrum of a Single Electron
(International Conference on Advances in Engineering, Architecture, Science and Technology (ICAEAST 2021)), 2021)In this study, the effects of ultrashort laser pulse shape for the laser-matter interaction have been considered. Three different pulse shapes, Gaussian, Super-Gaussian, and Cosine-Squared, are used to calculate the dipole ... -
Numerical Simulation of Diffraction Patterns with Different Illumination Laser Wavelength
(International Conference on Engineering Technologies (ICENTE'21), 2021)In this study, a computer simulation program generating Fresnel diffraction patterns from the apertures by using the different illumination wavelength sources has been studied. Changing the aperture-screen distance and ... -
Influence of hydrostatic pressure, temperature, and terahertz laser field on the electron-related optical responses in an asymmetric double quantum well
(Springer, 2021)In this study, the effects of hydrostatic pressure, temperature, and high-frequency intense laser field on the nonlinear optical properties of an asymmetric GaAs/AlGaAs double quantum well was theoretically investigated. ...