Nonlinear optical properties of asymmetric n-type double ?-doped GaAs quantum well under intense laser field
Abstract
The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double ?-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the ?-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures. © 2017, EDP Sciences, SIF, Springer-Verlag GmbH Germany.
Source
European Physical Journal BVolume
90Issue
9Collections
- Makale Koleksiyonu [5745]