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Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

dc.contributor.authorGenc, M.
dc.contributor.authorSheremet, V.
dc.contributor.authorElci, M.
dc.contributor.authorKasapoglu, A. E.
dc.contributor.authorAltuntas, I.
dc.contributor.authorDemir, I.
dc.contributor.authorEgin, G.
dc.contributor.authorIslamoglu, S.
dc.contributor.authorGur, Emre
dc.contributor.authorMuzafferoglu, N.
dc.contributor.authorElagoz, S.
dc.contributor.authorGulseren, O.
dc.contributor.authorAydinli, A.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:08Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:08Z
dc.date.issued2019
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2019.01.008
dc.identifier.urihttps://hdl.handle.net/20.500.12418/5943
dc.descriptionWOS: 000463693300002en_US
dc.description.abstractThis paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey, (TUBITAK) [113G042, 115E109]en_US
dc.description.sponsorshipWe are grateful to H. Morkoc, U Ozgur, V. Avrutin of Virginia Commonwealth University for many fruitful discussions. This work is supported by Scientific and Technical Research Council of Turkey, (TUBITAK Grant no: 113G042 and 115E109).en_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2019.01.008en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLight emitting diodesen_US
dc.subjectLuminescenceen_US
dc.subjectLED performanceen_US
dc.subjectCurrent distributionen_US
dc.titleDistributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDsen_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.department[Genc, M. -- Egin, G. -- Muzafferoglu, N.] Ermaksan AS, Optoelect R&D Ctr, TR-16065 Bursa, Turkey -- [Genc, M.] Bursa Tech Univ, Dept Mat Sci & Engn, TR-16310 Bursa, Turkey -- [Sheremet, V. -- Elci, M.] Bilkent Univ, Adv Res Labs, TR-06800 Ankara, Turkey -- [Elci, M.] Middle East Tech Univ, Inst Appl Math, TR-06800 Ankara, Turkey -- [Kasapoglu, A. E. -- Gur, Emre] Ataturk Univ, Dept Phys, TR-25240 Erzurum, Turkey -- [Kasapoglu, A. E.] Ataturk Univ, East Anatolia High Technol Applicat & Res Ctr, TR-25240 Erzurum, Turkey -- [Altuntas, I. -- Demir, I. -- Elagoz, S.] Cumhuriyet Univ, Nanotechnol Res Ctr, TR-58140 Sivas, Turkey -- [Islamoglu, S. -- Gulseren, O.] Bilken Univ, Dept Phys, TR-06800 Ankara, Turkey -- [Aydinli, A.] Uludag Univ, Elect & Elect Engn Dept, TR-16059 Bursa, Turkeyen_US
dc.contributor.authorIDGenc, Muhammet -- 0000-0003-1887-3582en_US
dc.identifier.volume128en_US
dc.identifier.endpage13en_US
dc.identifier.startpage9en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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