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dc.contributor.authorAlaydin, B. O.
dc.contributor.authorTuzemen, E. S.
dc.contributor.authorAltun, D.
dc.contributor.authorElagoz, S.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:09Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:09Z
dc.date.issued2019
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.urihttps://dx.doi.org/10.1142/S0217979219500541
dc.identifier.urihttps://hdl.handle.net/20.500.12418/5950
dc.descriptionWOS: 000463913800004en_US
dc.description.abstract30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements and dynamical simulations have been done for (002), (004) and (006) planes to determine strain and thickness of AlAs and GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured for same planes and also for (224) plane to find out tilt and relaxation of the DBR stack. Relaxation is not observed and it is confirmed with symmetric in-plane (400) Theta/2-Theta and RSM measurements. This is a first study in the literature according to the best of our knowledge. Finally, we have shown sensitivity of high angle diffraction planes to disorders in crystal. Angle-dependent reflectivity simulations have been also done and compared with measurements. 99.99% reflectivity is obtained with 99.5 nm stop bandwidth and 482.7 nm penetration depth.en_US
dc.language.isoengen_US
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTDen_US
dc.relation.isversionof10.1142/S0217979219500541en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDBRen_US
dc.subjectAlAs/GaAs HR-XRDen_US
dc.subjectreflectivityen_US
dc.subjectTheta/2-Thetaen_US
dc.subjectRSMen_US
dc.titleComprehensive structural and optical characterization of AlAs/GaAs distributed Bragg reflectoren_US
dc.typearticleen_US
dc.relation.journalINTERNATIONAL JOURNAL OF MODERN PHYSICS Ben_US
dc.contributor.department[Alaydin, B. O. -- Tuzemen, E. S.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Altun, D.] Cumhuriyet Univ, Dept Elect & Elect Engn, TR-58140 Sivas, Turkey -- [Elagoz, S.] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Alaydin, B. O. -- Tuzemen, E. S. -- Altun, D. -- Elagoz, S.] Cumhuriyet Univ, Nanophoton Applicat & Res Ctr, TR-58140 Sivas, Turkeyen_US
dc.identifier.volume33en_US
dc.identifier.issue8en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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