Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots
Date
2018Author
Alejandro Vinasco, JuanAlejandro Londono, Mauricio
Leon Restrepo, Ricardo
Eduardo Mora-Ramos, Miguel
Feddi, El Mustapha
Radu, Adrian
Kasapoglu, Esin
Luis Morales, Alvaro
Alberto Duque, Carlos
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The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron-impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron-impurity intersubband transitions allows the investigation of the light absorption response of the system.
Source
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSVolume
255Issue
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