dc.contributor.author | Alaydin, B. O. | |
dc.contributor.author | Altuntas, I. | |
dc.contributor.author | Tuzemen, E. Senadim | |
dc.contributor.author | Elagoz, S. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:38:30Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:38:30Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 1555-130X | |
dc.identifier.issn | 1555-1318 | |
dc.identifier.uri | https://dx.doi.org/10.1166/jno.2018.2276 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6356 | |
dc.description | WOS: 000428138400013 | en_US |
dc.description.abstract | In this study, we showed theoretically enhanced reflectance characteristics of nitride based blue Light Emitting Diode (LED) by adding GaN/AlxGa1-xN Distributed Bragg Reflector (DBR) between n-contact layer and GaN buffer layer. Calculation of reflectance and phase of electromagnetic waves are done by using Transfer Matrix Method (TMM). Light output of the LED structure is enhanced with 15 pair DBR, silver coating and optimizing GaN buffer, undoped GaN and n-contact GaN layer thicknesses. As a result of these, reflectance of the LED is increased from 92% to 98,6%. Finally, similar to 5% enhancement is showed in reflectance of the blue LED which results in increase in output power of LED. | en_US |
dc.description.sponsorship | Scientific and Technological Research Council of Turkey (TUBITAK) [1007-113G103] | en_US |
dc.description.sponsorship | This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK), Grant No: 1007-113G103. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.relation.isversionof | 10.1166/jno.2018.2276 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Distributed Bragg Reflector (DBR) | en_US |
dc.subject | Blue Light Emitting Diode (LED) | en_US |
dc.subject | Transfer Matrix Method (TMM) | en_US |
dc.subject | Gallium Nitride (GaN) | en_US |
dc.subject | Aluminum Gallium Nitride (AlxGa1-xN) | en_US |
dc.title | Simulation of Highly Reflective GaN/AlxGa1-xN Distributed Bragg Reflector Structure for UV-Blue LEDs | en_US |
dc.type | article | en_US |
dc.relation.journal | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | en_US |
dc.contributor.department | [Alaydin, B. O. -- Altuntas, I. -- Tuzemen, E. Senadim -- Elagoz, S.] Cumhuriyet Univ, Nanophoton Applicat & Res Ctr, TR-58140 Sivas, Turkey -- [Alaydin, B. O. -- Tuzemen, E. Senadim] Cumhuriyet Univ, Phys Dept, TR-58140 Sivas, Turkey -- [Altuntas, I. -- Elagoz, S.] Cumhuriyet Univ, Nanotechnol Engn, TR-58140 Sivas, Turkey | en_US |
dc.identifier.volume | 13 | en_US |
dc.identifier.issue | 3 | en_US |
dc.identifier.endpage | 393 | en_US |
dc.identifier.startpage | 387 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |