Sandwich method to grow high quality AlN by MOCVD
dc.contributor.author | Demir, I. | |
dc.contributor.author | Li, H. | |
dc.contributor.author | Robin, Y. | |
dc.contributor.author | McClintock, R. | |
dc.contributor.author | Elagoz, S. | |
dc.contributor.author | Razeghi, M. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:38:32Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:38:32Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0022-3727 | |
dc.identifier.issn | 1361-6463 | |
dc.identifier.uri | https://dx.doi.org/10.1088/1361-6463/aaa926 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6362 | |
dc.description | WOS: 000424503500001 | en_US |
dc.description.abstract | We report pulsed atomic layer epitaxy growth of a very high crystalline quality, thick (similar to 2 mu m) and crack-free AlN material on c-plane sapphire substrates via a sandwich method using metal organic chemical vapor deposition. This sandwich method involves the introduction of a relatively low temperature (1050 degrees C) 1500 nm thick AlN layer between two 250 nm thick AlN layers which are grown at higher temperature (1170 degrees C). The surface morphology and crystalline quality remarkably improve using this sandwich method. A 2 mu m thick AlN layer was realized with 33 arcsec and 136 arcsec full width at half maximum values for symmetric (0002) and asymmetric (10 (1) over bar5) reflections of omega-scan, respectively, and it has an atomic force microscopy root-mean-square surface roughness of similar to 0.71 nm for a 5 x 5 mu m(2) surface area. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.relation.isversionof | 10.1088/1361-6463/aaa926 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | AlN | en_US |
dc.subject | MOCVD | en_US |
dc.subject | epitaxy | en_US |
dc.title | Sandwich method to grow high quality AlN by MOCVD | en_US |
dc.type | article | en_US |
dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.contributor.department | [Demir, I. -- McClintock, R. -- Razeghi, M.] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA -- [Demir, I. -- Elagoz, S.] Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Li, H.] Univ Calif Santa Barbara, Dept Mat Sci & Engn, Santa Barbara, CA 93106 USA -- [Robin, Y.] Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan | en_US |
dc.identifier.volume | 51 | en_US |
dc.identifier.issue | 8 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
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