dc.contributor.author | Altuntas, Ismail | |
dc.contributor.author | Demir, Ilkay | |
dc.contributor.author | Kasapoglu, Ahmet Emre | |
dc.contributor.author | Mobtakeri, Soheil | |
dc.contributor.author | Gur, Emre | |
dc.contributor.author | Elagoz, Sezai | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:38:41Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:38:41Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0022-3727 | |
dc.identifier.issn | 1361-6463 | |
dc.identifier.uri | https://dx.doi.org/10.1088/1361-6463/aa9bd6 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6391 | |
dc.description | WOS: 000418927900001 | en_US |
dc.description.abstract | The aim of the study is to understand the effects of two stages of HT-GaN growth with different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In addition, the effects of two-stage growth on the transport properties has been presented through fabricated Schottky diodes. As the V/III ratio in the 1st stage growth of HT-GaN layer is varied, it has been observed that recovery of reflectance is faster with higher V/III ratios, while no significant effect has been observed by changing the V/III ratios in the 2nd stage of HT-GaN growth. The 2nd stage growth is caused to decrease in screw dislocation densities obtained from the high-resolution x-ray diffraction measurements. The lowest edge type dislocation densities have been obtained for samples with lower V/III ratios in both the 1st and 2nd stages of HT-GaN growth. Well-defined terraces and a few GaN atomic layer surface roughness have been realized through the atomic force microscopy measurements on all the samples. Ga atom bound oxygen states has been investigated through the x-ray photoelectron spectroscopy to find out the V/III ratio effect on the impurity incorporation. An increase in the V/III ratio has given rise to a higher percentage of oxygen incorporation during the 2nd stage of growth. The lowest internal quantum efficiency has been obtained for the samples grown at the highest V/III ratio for both the 1st and 2nd growth stages. Fine excitonic transitions have been indicated by the low temperature high-resolution photoluminescence measurements. Current-voltage measurements performed on the Schottky diodes have shown the effects on the diode parameters. | en_US |
dc.description.sponsorship | TUBITAK [113G103, 115E109] | en_US |
dc.description.sponsorship | The authors acknowledge the usage of Nanophotonics Research and Application Center at Cumhuriyet University (CUNAM) facilities. This work is supported by TUBITAK under Project Nos 113G103 and 115E109. The authors acknowledge the contributions of Mr Baris Bulut from Ermaksan Optoelectronic during growth studies. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.relation.isversionof | 10.1088/1361-6463/aa9bd6 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | GaN growth | en_US |
dc.subject | MOCVD | en_US |
dc.subject | V/III ratio | en_US |
dc.subject | edge dislocation | en_US |
dc.subject | screw dislocation | en_US |
dc.title | The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition | en_US |
dc.type | article | en_US |
dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.contributor.department | [Altuntas, Ismail -- Demir, Ilkay -- Elagoz, Sezai] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Altuntas, Ismail -- Demir, Ilkay -- Elagoz, Sezai] Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, TR-58140 Sivas, Turkey -- [Kasapoglu, Ahmet Emre -- Gur, Emre] Ataturk Univ, East Anatolian High Technol Applicat & Res Ctr, TR-25240 Erzurum, Turkey -- [Mobtakeri, Soheil -- Gur, Emre] Ataturk Univ, Dept Phys, Fac Sci, TR-25250 Erzurum, Turkey | en_US |
dc.contributor.authorID | Kasapoglu, Ahmet Emre -- 0000-0002-4261-5113; ELAGOZ, Sezai -- 0000-0002-3600-8640; gur, emre -- 0000-0002-3606-2751 | en_US |
dc.identifier.volume | 51 | en_US |
dc.identifier.issue | 3 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |