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Now showing items 31-35 of 35
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)
In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition
time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown
on ...
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)
Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to
LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ...
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(23.04.2023)
In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO)
films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...