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Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)
InxGa1−xAs epitaxial layers with different AsH3
flows have been grown on InP substrate with the MOVPE system. It has
been found that AsH3
flow variation affects the In concentration of InGaAs/InP structure because the ...