Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu: Recent submissions
Now showing items 41-60 of 75
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Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers
(2022)Achieving high threshold current density and high optical confinement are big challenges in the realization of high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this work, ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(2022)In this study, we report different SiH4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. ... -
Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β-Ga2O3 on sapphire
(2022)We report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (− 201) oriented β− Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the ... -
Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the QW generate localized excitons ... -
Molecularly imprinted composite discs for transferrin recognition
(Taylor and Francis, 2022)Human Transferrin (HTr) imprinted composite cryogel (HTr-MIPCC) discs were synthesized with distinctive structure and increased adsorption capacity and specificity for HTr by combining the advantages of the surface ... -
Molecularly Designed Ion-Imprinted Nanoparticles for Real-Time Sensing of Cu(II) Ions Using Quartz Crystal Microbalance
(MDPI, 5 Kasım 20)A molecularly designed imprinting method was combined with a gravimetric nanosensor for the real-time detection Cu(II) ions in aqueous solutions without using expensive laboratory devices. Thus, 1:1 and 2:1 mol-ratio-dependent ... -
Affinity Recognition Based Gravimetric Nanosensor for Equilin Detection
(MDPI, 30 Mayıs 2)The estrogenic hormones that are widely used in postmenopausal hormone supplements for women contaminate natural water resources. Equilin (Equ) is one of the estrogenic hormones that have a maximum contaminant level of ... -
Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Nonlinear optical properties in AlxGa1-xAs/GaAs double-graded quantum wells: The effect of the structure parameter, static electric, and magnetic field
(Elsevier, 2022)We present a theoretical simulation of the impact of applied external electric and magnetic fields, as well as of the change in structure parameters, on the nonlinear optical rectification (NOR), second harmonic ... -
Investigation of optical and structural properties of tin-doped copper oxide thin films prepared by the drop-cast method
(Springer, 2022)Tin-doped copper oxide (Sn:CuO) thin films produced by using the sol–gel drop-cast technique were examined and the effect of Sn doping concentration on the optical properties and the energy band gap of Sn:CuO thin films ... -
Interband transitions and exciton binding energy in a Razavy quantum well: effects of external fields and Razavy potential parameters
(Springer, 2022)In this paper, we theoretically investigated the influence of externally applied fields such as high-frequency non-resonant intense laser fields, static electric and magnetic fields, as well as structure parameters, on ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well
(Springer, 2022)The asymmetric potential profiles are focus of interest for researchers who study semiconductor optoelectronic devices. Therefore, in this study, the effects of structure parameters (σ and V0) and applied external ... -
The nonlinear optical rectification, second and third harmonic generation coefficients of Konwent potential quantum wells
(Springer, 2022)We have theoretically investigated the effect of structure parameters and applied external fields on the Ga1−xAlxAs/GaAs Konwent quantum well structure. Results of theoretical simulation have clarified the impact of applied ... -
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ... -
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ...