Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well
Tarih
2012Yazar
Ungan, FatihYesilgul, Unal
Sakiroglu, Serpil
Kasapoglu, Esin
Erol, Ayse
Arikan, Mehmet Cetin
Sari, Huseyin
Sokmen, Ismail
Üst veri
Tüm öğe kaydını gösterÖzet
Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
Kaynak
NANOSCALE RESEARCH LETTERSCilt
7Koleksiyonlar
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