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dc.contributor.authorYesilgul, U.
dc.contributor.authorUngan, F.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:04:45Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:04:45Z
dc.date.issued2011
dc.identifier.issn0217-9849
dc.identifier.urihttps://dx.doi.org/10.1142/S0217984911027467
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9387
dc.descriptionWOS: 000296781800005en_US
dc.description.abstractThe intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.en_US
dc.language.isoengen_US
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTDen_US
dc.relation.isversionof10.1142/S0217984911027467en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum wellen_US
dc.subjectimpurity binding energyen_US
dc.subjectintersubband transitionsen_US
dc.titleTHE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELDen_US
dc.typearticleen_US
dc.relation.journalMODERN PHYSICS LETTERS Ben_US
dc.contributor.department[Yesilgul, U. -- Ungan, F. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkeyen_US
dc.identifier.volume25en_US
dc.identifier.issue32en_US
dc.identifier.endpage2459en_US
dc.identifier.startpage2451en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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