The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots
Özet
Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved
Kaynak
SUPERLATTICES AND MICROSTRUCTURESCilt
48Sayı
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