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dc.contributor.authorOzturk, E.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:13:46Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:13:46Z
dc.date.issued2010
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2010.01.004
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9913
dc.descriptionWOS: 000276508200007en_US
dc.description.abstracten_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2010.01.004en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleOptical intersubband transitions in double Si delta-doped GaAs under applied magnetic field (vol 46, pg 752, 2009)en_US
dc.typeotheren_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkeyen_US
dc.contributor.authorIDOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.identifier.volume47en_US
dc.identifier.issue4en_US
dc.identifier.endpage567en_US
dc.identifier.startpage567en_US
dc.relation.publicationcategoryDiğeren_US


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