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    Combined effects of thermodynamic factors and external fields for nonlinear optical processes of deformed Mathieu quantum dot containing central impurity
    (Elsevier, 2023) Bahar, Mustafa Kemal; Baser, Pinar
    The theoretical impact of external parameters such as the hydrostatic pressure, temperature, electric field, magnetic field, as well as the Indium (In) concentration and quantum dot width on the nonlinear optical properties of a Mathieu quantum dot (MQD) with a screw dislocation and a hydrogenic impurity at its center, formed by an InxGa1-xAs/GaAs heterojunction, is presented. The wave equation of the system is solved in cylindrical coordinates using the effective mass approximation and the Runge-Kutta-Fehlberg (RKF) method, taking into account the direction of the screw dislocation and the symmetry of the structure. In addition to the screw dislocation, thermodynamic effects, electric and magnetic fields, In concentration, and the width of the MQD have significant effects on the electronic energy levels, dipole matrix elements, and transition frequencies, resulting in important consequences for the nonlinear optical properties. The effects and alternatives of the relevant parameters on the nonlinear optical properties of the MQD with a screw dislocation are discussed in detail. The optical properties that can be altered by these parameters may also be important for experimental studies in determining the optimality of the structure.& COPY; 2023 Elsevier B.V. All rights reserved.
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    Nonlinear optical specifications of the Mathieu quantum dot with screw dislocation
    (Springer Heidelberg, 2023) Bahar, Mustafa Kemal; Baser, Pinar
    In this study, the nonlinear optical properties of screw dislocation Inx Ga1-x As/GaAs Mathieu quantum dots (MQDs) are theoretically investigated for the first time, focusing on the optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG). In addition to the screw dislocation in the structure, external electric and magnetic fields, as well as the Aharonov-Bohm (AB) flux, are applied to the system. The aim of the study is to interpret how the characteristics of the NOR, SHG, and THG of MQDs change depending on the screw dislocation defect, external fields, AB flux, and structural factors such as indium concentration (In) and quantum dot width. The wave equation of the system is solved using the effective mass approximation and the Runge-Kutta-Fehlberg method in cylindrical coordinates, taking into account the direction of twist and the symmetry of the structure. The influence of all parameters on the nonlinear optical properties of the MQD with screw dislocation and their alternatives are discussed in detail. Furthermore, the optimality of the structure is discussed for a certain amount of screw dislocation, which can be important for experimental applications and device designs.
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    The second, third harmonic generations and nonlinear optical rectification of the Mathieu quantum dot with the external electric, magnetic and laser field
    (Elsevier, 2023) Bahar, Mustafa Kemal; Baser, Pinar
    In this study, the nonlinear optical properties of the In ������Ga1-������As/GaAs Mathieu quantum dot (MQD) are investigated for the first time, focusing on the nonlinear optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG). The effects of external fields such as the electric field, magnetic field, and laser radiation field on the nonlinear optical properties of MQD are examined, along with structural parameters such as quantum dot depth and width determined by the indium concentration. The motivation of the study is to explain the NOR, SHG, and THG characteristics of MQD in response to changes in external fields and structural factors. To investigate the effects of the laser field, the time-dependent part of the laser field is transferred to the potential energy term of the wave equation using the Kramers-Henneberger (KH) and dipole approximations, creating a laser-dressed potential. Then, the effective potential wave equation is solved using the tridiagonal matrix method. The effects of external fields and structural parameters of MQD on the NOR, SHG, and THG coefficients are discussed in detail. The optimality of the structure for device design and applications considering MQD is revealed, and alternative parameter analysis is conducted for this optimality.