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Öğe Effects of doping concentrations and position-dependent mass on the nonlinear optical properties of asymmetric double delta-doped GaAs quantum wells(Springer Heidelberg, 2024) Durmuslar, A. Salman; Al, E. B.; Althib, H. M.; Mora-Ramos, M. E.; Ungan, F.This study examines the electronic and optical properties of an asymmetric double delta doped quantum wells structure formed within GaAs. The electronic structure of system is obtained within effective mass and envelope wave function approximations. Optical responses are calculated in the framework of the compact density matrix approach. The roles of distance between wells, varying one well electron concentration, as well as length parameter of position-dependent mass, on the total optical absorption coefficients and the relative refractive index changes are investigated. The findings of this study indicate that prominence of optical coefficients occurs at higher energies for position-dependent mass, compared to constant mass case. Augmented right well electron concentrations lead to blue-shifts on the optical properties not only with constant mass but also with position-dependent mass. However, the increase in the wells' separation results the absorption peaks to move towards lower energies.Öğe Influence of hydrostatic pressure and temperature on the optical responses of asymmetric triple quantum wells(Springer Heidelberg, 2024) Durmuslar, A. Salman; Dakhlaoui, H.; Al, E. B.; Ungan, F.The work presents the effects of hydrostatic pressure and temperature on the electronic spectra as well as on the optical responses of parabolically shaped asymmetric triple quantum wells formed between the GaAs/Al0.3Ga0.7As heterostructures. The electronic structure of the configuration is obtained by iteratively solving the Schrodinger equation within effective mass and envelope wave function approximations. Optical properties are calculated within the compact density matrix approach framework. The results in this study show that increasing hydrostatic pressure field leads to small redshifts on the total optical absorption coefficient, relative refractive index change, nonlinear optical correction, and second and third harmonic generations, while temperature augmentation causes significant redshifts in these optical properties.Öğe Nonlinear optical properties of a quantum well with inversely quadratic Hellman potential(Springer Science and Business Media Deutschland GmbH, 2021) Turkoglu, A.; Dakhlaoui, H.; Durmuslar, A. Salman; Mora-Ramos, M.E.; Ungan, F.Abstract: A theoretical investigation of intraband nonlinear optical properties of a GaAs quantum well with inversely quadratic Hellman potential have been performed. It considers the presence of external electric and magnetic fields. In addition to this, the effects of the adjustable physical parameters (? and V) of the system on the optical properties of this structure were also investigated. For these numerical calculations, firstly, the conduction subband energy levels and the corresponding wave functions are obtained by solving the Schrödinger equation using the diagonalization method within the framework of effective mass and parabolic band approximations. Based on this information, results of numerical calculations for the linear, third-order nonlinear, and total optical absorption and relative refractive index change coefficients are presented. The obtained numerical results show the increase of the resonance peaks amplitudes with applied external electric and magnetic fields, as well as the shifting of their position the towards higher energies. It was also observed that the variations in ? and V have important effects on the magnitude and position of the resonance peaks. We believe that these results can be helpful in the design and practice of the optoelectronic devices used in the terahertz electromagnetic spectrum. Graphic abstract: [Figure not available: see fulltext.] © 2021, The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature.Öğe The non-resonant intense laser field effects on the binding energies and the nonlinear optical properties of a donor impurity in Rosen-Morse quantum well(Indian Assoc Cultivation Science, 2022) Durmuslar, A. Salman; Turkoglu, A.; Mora-Ramos, M. E.; Ungan, F.We analyze the influence of electron-donor impurity interaction as well as of a high-frequency non-resonant intense laser field on the intraband linear, third-order nonlinear, and total optical absorption coefficients in a GaAs/GaAlAs heterostructure with conduction band Rosen-Morse potential profile. For this, firstly, the binding energies associated with ground and first excited states (1s, 2s) of a hydrogenic donor center have been calculated as functions of the impurity position using the effective-mass approximation and a variational procedure. Then, the linear, third-order nonlinear, and total optical absorption coefficients were evaluated for transitions between the impurity and subband electronic states. Emphasis is made on understanding the role of structure parameters on the features of these nonlinear optical properties. The numerical results show that the impurity binding energies and lowest intersubband transitions depend strongly on the high-frequency intense laser field. The presence of impurity atom causes a blueshift in the optical spectrum and an increase in the amplitude of absorption coefficients. Additionally, it was observed that studied optical transitions are sensitive to the structure parameters and high-frequency intense laser field, thus affecting the optical absorption response.
