Yazar "Durmuslar, Aysevil Salman" seçeneğine göre listele

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    Nonlinear optical properties of n-type asymmetric double ?-doped quantum wells: role of high-frequency laser radiation, doping concentration and well width
    (Springer Heidelberg, 2020) Durmuslar, Aysevil Salman; Eduardo Mora-Ramos, Miguel; Ungan, Fatih
    A numerical investigation on the nonlinear optical rectification, second and third harmonic generation coefficients in asymmetric double n-type d-doped GaAs quantum well is performed in order to identify the influence of non-resonant intense laser radiation, doping concentration and the change in well widths. The energy eigenvalues and the corresponding eigenfunctions are determined by using effective-mass and parabolic band approximations. The working analytical expressions for the optical coefficients are derived from the iterative solving of compact-density matrix description of dielectric susceptibility. The obtained results reveal that the position and amplitude of the nonlinear optical rectification, second and third harmonic generation coefficients can be altered by modifying the external field as well as the compositional and geometrical setups.
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    Numerical study of optical absorption coefficients in Manning-like AlGaAs/GaAs double quantum wells: Effects of doped impurities
    (Elsevier, 2023) Dakhlaoui, Hassen; Belhadj, Walid; Durmuslar, Aysevil Salman; Ungan, F.; Abdelkader, A.
    We study the electronic and optical properties of a heterostructure based on Manning-like double quantum wells under the impact of an n-doped layer inserted in two different locations. By solving the coupled Schro & BULL;dingerPoisson equations, we have determined the four lowest energy levels and their corresponding density of probabilities. After that, we have deduced the optical absorption coefficients between the ground level and each excited state. The study addresses two locations of the doped layer. The first location is at the center of the heterostructure and the second one is at the middle of the right quantum well. The obtained findings show that the energy levels are degenerated when we dope at the center especially for low values of doping concentrations. However, by doping at the right well, we observe a lifting of degeneracy even for low concentrations of the doped layer. Our study demonstrated that the lifting of degeneracy which was absent for low concentrations in the case of doping at the center of the heterostructure can be obtained by adjusting one of the structural parameters of the Manning-like potential. Furthermore, we have discussed in detail the blue and red shifts behaviors observed in the dominant optical absorption coefficients, especially by varying the concentration of the doped layer. Our study confirms that the doping technique stills an excellent strategy to manipulate the electronic and optical properties in quantum wells based on symmetrical shapes.