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Öğe Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure-temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk(Elsevier, 2024) Fakkahi, A.; Başer, Pınar; Jaouane, M.; Sali, A.; Ed-Dahmouny, A.; El-Bakkari, K.; Arraoui, R.GaAs/GaAlAs quantum dots can be doped with various impurities to modify their optoelectronic properties. Common impurities used for doping include: Hydrogenic impurity (HI), Silicon (Si), Selenium (Se), Germanium (Ge), and Sulfur (S) are common n-type dopant in GaAs-based materials. This work has investigated the effects of temperature and pressure on the refractive index changes (RICs) and optical absorption coefficients (OACs) in the multi-layer quantum disk, accounting for central cell correction. We have used the finite element method to calculate the eigenvalues and their corresponding wave-functions. These values are utilized in the computation of the OACs and RICs. Our outcomes can be summarized as follows: (i) The applied pressure induces a red-shift of the OACs peaks, and their magnitude is reduced. Similarly, temperature causes a blueshift of the OACs peaks, and their magnitude is enhanced. (ii) The presence and type of impurity lead to significant changes in both OACs and RICs.Öğe Effects of the size and applied electric field on the photoionization cross-section of elliptical cylindrical CdS/ZnS core-shell quantum dots immersed in various dielectric matrices(Elsevier Sci Ltd, 2025) Zeiri, N.; Baser, P.; Jahromi, H. Dehdashti; Yahyaoui, N.; Ed-Dahmouny, A.; Sfina, N.; Duque, C. A.In this study, the effects of the electric field in different directions on hydrogenic donor impurity (HDI) confined to a CdS/ZnS elliptical core/shell cylindrical quantum dot (ECSCQD) immersed in a dielectric matrix (DM) were investigated. The binding energy (BE) and their corresponding photoionization cross-section (PICS) are computed by solving the Schrodinger equation in cylindrical coordinates in the framework of the effective mass approximation (EMA) using a variational and perturbation approach. The effects of different dielectric matrices, lateral and normal electric field (EF) force, geometric factors such as the size of ECSCQDs and ellipticity constants on BE and PICS were presented. It has been indicated that weak lateral EF strength compared to normal EF strength, dielectric matrix, and geometric factors have a significant effect on the BE and PICS. In addition, it was observed that dielectric matrices and different ellipticity constants were quite effective on the Stark shift (S.S.) in the hydrogenic donor impurity ground state energy due to the electric field. The results obtained from the calculations showed that the structure factors, different impurity positions, the external electric field applied to the structure, the elliptical cylinder shape and the dielectric matrix in which the structure is embedded are quite decisive in the magnitude of the PICS amplitudes and resonant peak values.Öğe Hydrogenic donor-related binding energy and diamagnetic susceptibility in multilayer cylindrical quantum dots under hydrostatic pressure(Springer Heidelberg, 2023) El-Bakkari, K.; Jaouane, M.; Fakkahi, A.; Ed-Dahmouny, A.; Arraoui, R.; Azmi, H.; Sali, A.This study employs the finite element method based on the effective-mass approximation (EMA) to numerically investigate the behavior of impurities in multilayer cylindrical quantum dots (MLCQDs). We consider the applied hydrostatic pressure (P) in our numerical analysis. The study presents numerical results for macroscopic parameters that follow the electronic properties, the binding energy (E-b), and diamagnetic susceptibility (?(dia)) of the ground state (1 s) and some excited states (1p and 2 s) of the impurity in the MLCQDs. The E-b and the ?(dia) for the three states are calculated as a function of the radius R, impurity position z0 and the hydrostatic pressure. The numerical results show that the binding energies of impurities decrease with the radius for all levels. The E-b(1s) and E-b(1p) have three maximum values that typify the number of the quantum dot layer materials contained in our system. Moreover, the diamagnetic susceptibility for the three levels is strongly affected by the hydrostatic pressure, impurity location, and radius.Öğe Investigation of nonlinear optical rectification within multilayer wurtzite InGaN/GaN cylindrical quantum dots under the impact of temperature and pressure(Elsevier, 2024) Jaouane, M.; Ed-Dahmouny, A.; Fakkahi, A.; Arraoui, R.; El-Bakkari, K.; Azmi, H.; Sali, A.We have looked numerically at variations of the nonlinear optical rectification (NOR) for an impurity donor localized in a wurtzite Inx0Ga1-x0N/GaN multilayer cylindrical quantum dots (MLCQDs), which is under the effect of hydrostatic pressure and temperature. Using the effective mass approximation, the compact density matrix formalism, we have solved the Schrodinger equation by the finite element method (FEniCS Project) . Firstly, we consider the impact of altering the polarization direction of the incident electromagnetic radiation. Specifically, we explore two distinct scenarios: axial, along the growth axis of the structure, and circular, across the cross-section of the cylinder. From our investigation, we found that the nonlinear optical rectification is determined by two main parameters: the transition energy, which is mainly related to quantum confinement, and the geometrical factor that depends on the distribution of the electron wave functions. The NOR experiences a blueshift with an increase in hydrostatic pressure or indium composition, and a redshift with an increase in temperature or quantum dot radius, where the impurity is located in the center of the upper QD. Furthermore, the results show that the amplitude and resonance peak position of NOR are significantly influenced by varying the impurity's position and the barrier width.Öğe Modeling and simulation of the influence of quantum dots density on solar cell properties(Springer Heidelberg, 2023) Jaouane, M.; Fakkahi, A.; Ed-Dahmouny, A.; El-Bakkari, K.; Tuzemen, A. Turker; Arraoui, R.; Sali, A.Based on the finite element method using the FEniCS computing platform and python programming, we solve the Schrodinger equation within the effective mass approximation. Its solution gives us the necessary energy for an electron to transit from an intermediate band to a conduction band, as well as the distribution of probability density within the system. In this work, we have investigated the efficiency of the InAs/GaAs pyramid quantum dot intermediate band solar cell (PQD-IBSC) as a function of the structure parameters and quantum dot density. The simulation results indicated the strong dependence of the efficiency of PQD-IBSC on the confinement effect, quantum dot number or quantum dot density and coupling strength. The conversion efficiency grows from 14.4587% to the optimal efficiency 17.8807%. Generally, the best efficiency is obtained for small barrier width, large quantum dot height and great quantum dot density.Öğe Modulation of nonlinear optical rectification, second, and third harmonic generation coefficients in n-type quadruple 8-doped GaAs quantum wells under external fields(Elsevier, 2024) Sayrac, H.; Jaouane, M.; Ed-Dahmouny, A.; Sali, A.; Ungan, F.The paper theoretically explores the variations in nonlinear optical rectification (NOR), second (SHG), and third harmonic generation (THG) coefficients of an n-type quadruple 8-doped GaAs quantum well in the presence of electric, magnetic, and THz laser fields. The energies of subbands and associated wave functions are derived through the solution of the Schrodinger equation, utilizing effective mass and parabolic band approximations. The findings indicate that the applied external electric and magnetic fields significantly influence both the magnitudes and the positions of the peaks in NOR, SHG, and THG concerning the incident photon energies. In addition to the influences of electric and magnetic fields, subjecting the system to an intense laser field results in noticeable changes in the THG, SHG, and NOR coefficients. These numerical findings regarding the optical properties of quadruple 8-doped quantum wells in the presence of external fields could offer valuable guidance for experimental studies.Öğe Optical and electronic properties of confined exciton in a dot-in-rod structure(Elsevier Ltd, 2025) Jaouane, M.; Arraoui, R.; Ed-Dahmouny, A.; Fakkahi, A.; Azmi, H.; El-Bakkari, K.; Althib, H.M.This study explores the excitonic properties of CdSe/CdS dot-in-rod nanostructures using the perturbation method within the effective mass approximation, combined with the finite element method. We analyze the first three excitonic energy levels (1S, 2S, and 3S), along with the electron and hole states, the exciton binding energy, and absorption coefficient for transitions between these levels under an applied electric field, as functions of the dot radius (Rc) and sidewall thickness (C). Our results reveal that the exciton binding energy reaches a maximum at a critical dot radius (Rc≃2nm), while excitonic energy levels decrease with increasing R due to quantum confinement effects. The applied electric field significantly modifies the exciton energy, increasing the first and third states while decreasing the second due to the quantum-confined Stark effect, which induces carrier polarization. The absorption coefficient for transitions among the 1S, 2S, and 3S peaks in an energy range comparable to experimentally observed photoluminescence spectra. Additionally, as Rc increases, the absorption peak undergoes a blue shift, whereas an increase in C results in a redshift and a slight enhancement in amplitude. These findings highlight the potential for tuning excitonic properties in optoelectronic and quantum applications. © 2025 Elsevier LtdÖğe Photoionization cross section of donor single dopant in multilayer quantum dots under pressure and temperature effects(2022) Jaouane, M.; Sali, A.; Fakkahi, A; Arraoui, R.; Ed-Dahmouny, A.; Ungan, FatihThe shallow donor single dopant confined in the multilayer cylindrical quantum dots is investigated numerically within the framework of effective-mass approximation. The Schr¨odinger equation that governs the wave function of a complicated system is solved numerically by the finite element method using the Python programming language. The results indicate that the photoionization cross section (PCS) is similar to the Gauss function curve, the height of the curve’s peak is proportional to oscillator strength, and the center peak position is related to the impurity binding energy. These two last parameters are dependent on the distribution of probability density across each part of the system. The probability density is tuned by the electron confinement and optical transition. The augmentation of dot radius or temperature decreases the electron confinement, which causes a redshift of PCS, and the presence of hydrostatic pressure blue shifts the PCS. On the other side, As the dot radius and hydrostatic pressure are increased, the oscillator’s strength increases, raising values near the critical energy, and vice versa for temperature.Öğe Theoretical investigation of optoelectronic properties in PbS/CdS core/shell spherical quantum dots under the effect of the electric field intensity, hydrogenic impurity and geometric parameters(Springer, 2024) Jellouli, E.; Zeiri, N.; Başer, Pınar; Yahyaoui, N.; Ed-Dahmouny, A.; Murshed, Mohammad N.; Said, M.In this paper, we theoretically investigated the combined effects of the external electric field (EF) strength and the geometric parameters on the linear, nonlinear and total dielectric functions as well as the effective dielectric function (DF) coefficients of PbS/CdS spherical core/shell quantum dots (CSQD) in the presence of the hydrogenic impurity located at the center. The subband energy eigenvalues and their corresponding wave functions are obtained by solving the time-independent Schr & ouml;dinger equation and using the variational method (VM) in the framework of the effective mass approximation (EMA). The linear, nonlinear and total DF as well as the effective DF were discussed and evaluated under the influence of EF intensity, geometric parameters, the change of the number of quantum dots (QDs) per unit volume and optical intensity I based on the compact density matrix (CDM) approach. The obtained results show that the height peaks of the linear, nonlinear and Total DF as well as the effective DF coefficients increase and their resonant peak moves towards lower energies as the EF and geometric factors increase in both cases with and without considering the hydrogenic impurity effect. Furthermore, our findings show that the impact of optical intensity and the number of QDs per unit volume does not change the resonance peaks of imaginary parts of DF and effective DF but decreases their magnitudes. As a result, we believe that numerical results will present important developments and provide great contributions in designing new optoelectronic devices related to CSQD hetero-nanostructure.Öğe Third-order nonlinear optical susceptibility of hydrogenic impurity in Ge/ Si0.15Ge0.85 spherical core/shell quantum dots under electric field(Pergamon-Elsevier Science Ltd, 2024) Hammouda, K.; Yahyaoui, N.; Zeiri, N.; Ed-Dahmouny, A.; Başer, Pınar; Sali, A.; Said, M.In this review, we have investigated theoretically the third-order nonlinear optical susceptibility in Ge/ Si0.15Ge0.85 spherical core/shell quantum dots under electric field (EF) for both cases with and without on -center impurity within the framework of the compact-density-matrix (C.D.M). The eigenenergies and their corresponding wave functions of the system are computed by solving the three-dimensional Schro center dot dinger equation using the effective mass approximation (E.M.A) using the variational method (VM). Our computational results show that both the energy levels and the third-order nonlinear optical susceptibility are strongly affected by the quantum dot size, the effects of the hydrogenic impurity, and the electric field intensity.
