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    Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric AlxGa1?xAs/GaAs quantum well
    (Elsevier Ltd, 2021) Ungan, F.; Bahar, M.K.; Rodríguez-Magdaleno, K.A.; Mora-Ramos, M.E.; Martínez-Orozco, J.C.
    The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization for asymmetric potential profiles enables to the semiconductor device designers to have possible ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the potential profile. Once the potential profile is well defined, with the desired range on operation, the external factors play also an important role on the optical properties tuning. In particular, in this paper we reported the absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for an AlxGa1?xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions reported here. © 2020 Elsevier Ltd
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    Nonlinear optical properties of a quantum well with inversely quadratic Hellman potential
    (Springer Science and Business Media Deutschland GmbH, 2021) Turkoglu, A.; Dakhlaoui, H.; Durmuslar, A. Salman; Mora-Ramos, M.E.; Ungan, F.
    Abstract: A theoretical investigation of intraband nonlinear optical properties of a GaAs quantum well with inversely quadratic Hellman potential have been performed. It considers the presence of external electric and magnetic fields. In addition to this, the effects of the adjustable physical parameters (? and V) of the system on the optical properties of this structure were also investigated. For these numerical calculations, firstly, the conduction subband energy levels and the corresponding wave functions are obtained by solving the Schrödinger equation using the diagonalization method within the framework of effective mass and parabolic band approximations. Based on this information, results of numerical calculations for the linear, third-order nonlinear, and total optical absorption and relative refractive index change coefficients are presented. The obtained numerical results show the increase of the resonance peaks amplitudes with applied external electric and magnetic fields, as well as the shifting of their position the towards higher energies. It was also observed that the variations in ? and V have important effects on the magnitude and position of the resonance peaks. We believe that these results can be helpful in the design and practice of the optoelectronic devices used in the terahertz electromagnetic spectrum. Graphic abstract: [Figure not available: see fulltext.] © 2021, The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature.