Yazar "Nava-Maldonado, F. M." seçeneğine göre listele

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    In plane magnetic field and intense laser field effects on second harmonic generation of asymmetric AlGaAs/GaAs double quantum well
    (2022) P´erez-Gonz´alez, J.; Rojas-Brise˜no, J. G.; Nava-Maldonado, F. M.; Del Rio-De Santiago, A.; Ungan, Fatih; Dakhlaoui, H.; Martinez-Orozco, Juan Carlos
    The optical properties for nano-structured semiconductor systems are of great importance nowadays, due to its possible implementation for the design of efficient optoelectronic devices. It is also well known that external fields can modify the electronic structure and induce changes the optical properties as well. In particular the asymmetric double quantum well structures are of paramount importance because its wide range of possible configurations and also because are experimentally feasible and well controlled, particularly AlxGa1¡xAs/GaAs heterostructures. In this work we report a systematic study on second harmonic generation (SHG) for an asymmetric AlxGa1¡xAs/GaAs double quantum well, as a function of non-resonant intense laser field and an (in-plane) magnetic field. We analyze the energy level behavior as well as the dipole matrix elements as a function of the above mentioned factors, that are important for the SHG, as we discus in this paper. We report a particular configuration that enhance the SHG signal, with and without intense laser field effect, as well as magnetic fields, that also can be uses to tune the SHG.
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    Intra and interband optical absorption coefficient for asymmetric double AlGaAs/GaAs quantum well under hydrostatic pressure and electric field effects
    (Elsevier, 2024) Maldonado-Villa, B. E.; Rodriguez-Magdaleno, K. A.; Nava-Maldonado, F. M.; Duque, C. A.; Ungan, F.; Martinez-Orozco, J. C.
    In this work, we have studied the effects of hydrostatic pressure and an electric field applied along the confinement direction on the absorption coefficient for asymmetric double AlGaAs/GaAs quantum wells within the framework of the effective mass theory. The hydrostatic pressure considered ranges from 0 to 40 kbar, while the chosen electric field ranges from-25 to 30 kV/cm, yielding the most interesting results. We have reported the system's energy levels, the associated dipole matrix elements, and the inter- and intra-band absorption coefficient for the most probable transition, considering each external factor separately. We found that the hydrostatic pressure induces a significant blueshift in the interband absorption coefficient, while it induces a slight redshift in the intraband transitions. On the other hand, the electric field initially redshifts the signal, and later it becomes blue- shifted for the interband absorption coefficient, exhibiting a very similar behavior for intraband transition as the electric field changes. These results show that the hydrostatic pressure, as well as the electric field, can be used as efficient mechanisms to tune both inter and intraband optical transitions.
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    Third harmonic generation of a 12-6 GaAs/Ga1-xAlxAs double quantum well: effect of external fields
    (Springer Heidelberg, 2024) Rodriguez-Magdaleno, K. A.; Demir, M.; Ungan, F.; Nava-Maldonado, F. M.; Martinez-Orozco, J. C.
    In this paper, we report the third harmonic generation in a 12-6 potential profile-shaped GaAs/Ga1-xAlxAs double quantum well. We investigate the effects of the well width size and the presence of the external fields: electric, magnetic, and intense laser. The electronic structure is calculated within the effective mass approximation using a diagonalization method to solve the Schrodinger equation. The expression for third harmonic generation comes from the compact density matrix method. Our results show that the intense laser field effect strongly affects the optoelectronic properties; the electric field (well width) redshifts (blueshifts) the third harmonic generation peaks. Additionally, we observe that the magnetic field has a negligible impact on the studied properties for this potential profile. It is important to stress that the optical signal is in the THz range and that these results can be considered to design possible systems for THz radiation in optoelectronic devices.