Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films

dc.contributor.authorBaghdedi Dhouha
dc.contributor.authorHopoğlu Hicret
dc.contributor.authorDemir İlkay
dc.contributor.authorAltuntaş İsmail
dc.contributor.authorAbdelmoula Najmeddine
dc.contributor.authorŞenadım Tüzemen Ebru
dc.date.accessioned2024-03-05T08:41:56Z
dc.date.available2024-03-05T08:41:56Z
dc.date.issued14.10.2023tr
dc.departmentFen Bilimleri Enstitüsütr
dc.description.abstractIn this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of GeOx thin films. X-ray diffraction was utilized to examine the crystal structure, and a scanning electron microscope was utilized to measure the thickness. In order to investigate the local structure and bonding characteristics, Raman spectroscopy was used. The refractive index, extinction coefficient, and dielectric parameters were calculated using spectroscopic ellipsometry for the 300–1100 nm spectral region. Refractive index and extinction coefficient spectral patterns were discovered by using a sample-air optical model to analyze the experimental ellipsometric data. Notably, a considerable rise in the refractive index was accompanied by a rise in substrate temperature.tr
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14664
dc.language.isoenen_US
dc.relation.publicationcategoryUluslararası Editör Denetimli Dergide Makaletr
dc.rightsinfo:eu-repo/semantics/openAccesstr
dc.subjectGeOx · Raman spectrometry · RF · Optical study · Structural studytr
dc.titleEffect of substrate temperature on Raman study and optical properties of GeOx/ Si thin filmsen_US
dc.typeArticleen_US

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