Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well

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dc.contributor.authorDakhlaoui, H.
dc.date.accessioned2025-05-05T08:05:38Z
dc.date.available2025-05-05T08:05:38Z
dc.date.issued2024
dc.departmentFakülteler, Mühendislik Fakültesi, Nanoteknoloji Mühendisliği Bölümü
dc.departmentFakülteler, Fen Fakültesi, Fizik Bölümü
dc.description.abstractThis presented work includes the first in-depth theoretical investigation of the third harmonic generation (THG) coefficients of the AlGaAs/GaAs three-step quantum well. We explore how these optical properties evolve when influenced by tunable structural parameters and various external fields, including electric, magnetic, and non-resonant intense laser fields. Firstly, we obtained the subband energy eigenvalues and eigenfunctions of the structure using the diagonalization method within the framework of the effective mass and envelope function approach. Then, we calculated the THG coefficients of the structure using the compact density matrix approximation. The obtained numerical results demonstrate that, within a certain range of structural parameter adjustments and applied external field changes, significant shifts (red or blue) occur in the resonance peak of the THG coefficient. These changes elegantly reflect the practical implications of the presented study. Finally, we discuss the optimality of the structure for a certain amount of applied external fields, which can be crucial for pre-experimental studies applications and the design of optoelectronic devices.
dc.identifier.citationSayrac, M., Dakhlaoui, H., Belhadj, W. et al. Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well. Eur. Phys. J. Plus 139, 57 (2024). https://doi.org/10.1140/epjp/s13360-024-04878-w
dc.identifier.doihttps://doi.org/10.1140/epjp/s13360-024-04878-w
dc.identifier.endpage10
dc.identifier.issue57
dc.identifier.scopusqualityQ1
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/20.500.12418/35694
dc.identifier.volume139
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.institutionauthorSayrac, M.
dc.institutionauthorUngan , F.
dc.institutionauthoridhttps://orcid.org/0000-0003-4373-6897
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofEur. Phys. J. Plus
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleEffect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well
dc.typeArticle

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