Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films

dc.contributor.authorBaghdedi, Dhouha
dc.contributor.authorHopoğlu, Hicret
dc.contributor.authorDemir, İlkay
dc.contributor.authorAltuntaş, İsmail
dc.contributor.authorAbdelmoula, Najmeddine
dc.contributor.authorŞenadım, Tüzemen Ebru
dc.date.accessioned2024-03-05T10:16:48Z
dc.date.available2024-03-05T10:16:48Z
dc.date.issued14.10.2023tr
dc.departmentEğitim Bilimleri Enstitüsütr
dc.description.abstractIn this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of GeOx thin films. X-ray diffraction was utilized to examine the crystal structure, and a scanning electron microscope was utilized to measure the thickness. In order to investigate the local structure and bonding characteristics, Raman spectroscopy was used. The refractive index, extinction coefficient, and dielectric parameters were calculated using spectroscopic ellipsometry for the 300–1100 nm spectral region. Refractive index and extinction coefficient spectral patterns were discovered by using a sample-air optical model to analyze the experimental ellipsometric data. Notably, a considerable rise in the refractive index was accompanied by a rise in substrate temperature.tr
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14671
dc.language.isoenen_US
dc.relation.publicationcategoryRaportr
dc.rightsinfo:eu-repo/semantics/openAccesstr
dc.subjectGeOx · Raman spectrometry · RF · Optical study · Structural studytr
dc.titleEffect of substrate temperature on Raman study and optical properties of GeOx/ Si thin filmsen_US
dc.typeArticleen_US

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