Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure-temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk için istatistikler
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Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure-temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk | 2 |
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