Now showing items 1-2 of 2
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Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures
Dogan, Hulya; Yildirim, Nezir; Orak, Ikram; Elagoz, Sezai; Turut, Abdulmecit (ELSEVIER SCIENCE BV, 2015)Frequency-dependent capacitance (C) and conductance (C) characteristics of the Au/Ni/n-GaN/undoped GaN device have been investigated in the reverse bias voltage range of 0.00-0.40 V. The GaN films have been epitaxially ... -
CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS
Yildirim, Nezir; Turut, Abdulmecit; Dogan, Hulya (WORLD SCIENTIFIC PUBL CO PTE LTD, 2018)The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600 degrees C and 700 degrees C for 1 min. The apparent barrier height Phi(ap) and ideality factor of the diodes were calculated from ...
