Browsing by Subject "GaAs"
Now showing items 1-5 of 5
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Analysis of current-voltage-temperature characteristics and T-0 anomaly in Cr/n-GaAs Schottky diodes fabricated by magnetron sputtering technique
(ELSEVIER SCIENCE BV, 2009)We have fabricated two groups of Cr/n-GaAs Schottky diodes (SDs) by magnetron sputtering technique to determine whether To anomaly varies in similarly fabricated SDs or not. Firstly, the first group diodes were inserted ... -
The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2019)We report the effects of AsH3 (arsine) on morphological, structural, optical and crystalline quality of MOVPE (metal organic vapor phase epitaxy) grown GaAs/Ge heterostructures. AsH3 pre-flow supplied on Ge substrate to ... -
DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)We have prepared the sputtered Ni/n-GaAs Schottky diodes which consist of as deposited, and diodes annealed at 200 and 400 degrees C for 2 min. The effect of thermal annealing on the temperature-dependent current-voltage ... -
Intense laser field-induced nonlinear optical properties of Morse quantum well
(WILEY-V C H VERLAG GMBH, 2017)authoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects ... -
Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots
(WILEY-V C H VERLAG GMBH, 2018)The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity ...
