Now showing items 1-3 of 3
-
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
(IOP PUBLISHING LTD, 2018)We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced ... -
The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition
(IOP PUBLISHING LTD, 2018)The aim of the study is to understand the effects of two stages of HT-GaN growth with different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In addition, the effects of two-stage ... -
V/III ratio effects on high quality InAlAs for quantum cascade laser structures
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2017)In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown ...
