Now showing items 1-5 of 5
Intersubband optical absorption in quantum wells under applied electric and intense laser fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained ...
Intersubband optical absorption in Si delta-doped GaAs for the donor distribution and thickness as dependent on the applied electric field
(E D P SCIENCES, 2004)
We have theoretically investigated the intersubband transition for different doping concentrations and thickness in Si delta-doped GaAs with an applied electric field. The electronic properties such as the delta-potential ...
Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models
(IOP PUBLISHING LTD, 2004)
For different donor distribution types we theoretically investigate the intersubband transitions of single Si delta-doped GaAs structure as dependent on the applied electric held. The diffusion of donor impurities is taken ...
Intersubband optical absorption of double Si delta-doped GaAs layers
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2004)
For different applied electric fields the intersubband transitions of double Si delta-doped GaAs structures are theoretically investigated for a uniform donor distribution. The electronic structure has been calculated by ...
The dependence of the intersubband transitions in square and graded QWs on intense laser fields
(PERGAMON-ELSEVIER SCIENCE LTD, 2004)
The intersubband absorption in square and graded quantum wells under a laser field is calculated within the framework of the effective mass approximation. We conclude that, for quantum wells with different shapes, the laser ...