Now showing items 1-4 of 4
The triple Si delta-doped GaAs structure
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...
Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum well
(IOP PUBLISHING LTD, 2005)
The laser field dependence of the intersubband optical absorption in a graded quantum well (GQW), under an applied electric field is calculated in the effective mass approximation. We have theoretically shown that, in the ...
Intersubband transitions in quantum wells under intense laser field
An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effective-mass approximation. Results obtained show that intersubbband optical ...