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The effect of intense laser field on the photoionization cross-section and binding energy of shallow donor impurities in graded quantum-well wire under an electric field
(IOP PUBLISHING LTD, 2006)
The laser-field dependence of the impurity binding energy and donor-related photoionization cross-section in graded quantum-well wire under an external static electric field is calculated by a variational method and in the ...
Ground state energy of excitons in quantum dot treated variationally via Hylleraas-like wavefunction
(IOP PUBLISHING LTD, 2009)
In this work, the effects of quantum confinement on the ground state energy of a correlated electron-hole pair in a spherical and in a disc-like quantum dot have been investigated as a function of quantum dot size. Under ...
Shallow donors in a coupled triple graded quantum well under the electric and magnetic fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2006)
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum wells which is obtained by changing the depth of the central-well potential (V-o) is calculated by using a variational approach. ...
ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and ...
Magnetic-field effect on the diamagnetic susceptibility of hydrogenic impurities in quantum well-wires
(ELSEVIER SCIENCE BV, 2009)
We have studied the magnetic field effects on the diamagnetic susceptibility and binding energy of a hydrogenic impurity in a quantum well-wire by taking into account spatially dependent screening. Using the effective-mass ...
Binding energies of donor impurities in modulation-doped GaAs/AlxGa1-xAs double quantum wells under an electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al0.33Ga0.67 As double quantum wells (DQWs) under an electric field which is applied along the ...
Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on ...
Intersubband optical absorption in double quantum well under intense laser field
(EDP SCIENCES S A, 2006)
The intersubband absorption in symmetric double quantum wells under the laser field is theoretically calculated within the framework of the effective mass approximation. Results obtained show that intersubbband optical ...
FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
Valence band structure with spin-orbit (SO) coupling of GaAs/Ga1-xAlxAs square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband ...
Fourier transform technique in variational treatment of two-electron parabolic quantum dot
(IOP PUBLISHING LTD, 2009)
In this work, we propose an efficient method of reducing the computational effort of variational calculation with a Hylleraas-like trial wavefunction. The method consists of introducing integra transforms for the terms as ...