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dc.contributor.authorOzturk, Emine
dc.contributor.authorSokmen, Ismail
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:14:47Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:14:47Z
dc.date.issued2009
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2008.11.009
dc.identifier.urihttps://hdl.handle.net/20.500.12418/10263
dc.descriptionWOS: 000263006900003en_US
dc.description.abstractThe energy levels of holes in symmetric single quantum well under the laser field are theoretically calculated within the framework of the effective mass approximation. Results obtained show that the potential profile and energy levels can significantly be modified and controlled by intense laser field and the well width. The effect of the laser field and the well width on the energy difference changes the degree of the confinement, and thus this behavior can be used to study these systems in regions of interest, without the need for the growth of many different samples. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2008.11.009en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSingle quantum wellen_US
dc.subjectIntense laser fielden_US
dc.subjectValance banden_US
dc.titleEffect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructureen_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.department[Ozturk, Emine] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, Ismail] Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.contributor.authorIDOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.identifier.volume45en_US
dc.identifier.issue1en_US
dc.identifier.endpage21en_US
dc.identifier.startpage16en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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