Shallow donors in the triple-graded quantum well under the hydrostatic pressure and external fields
Abstract
The binding energy of the donor in the triple-graded GaAs-(Ga,Al)As quantum well under the hydrostatic pressure, electric and magnetic fields are calculated by using a variational approach. The results have been obtained in the presence of hydrostatic pressure, magnetic and electric fields applied along the growth direction as a function of the impurity position without consideration of a mass mismatch or dielectric mismatch. (c) 2005 Elsevier B.V. All rights reserved.
Source
PHYSICA B-CONDENSED MATTERVolume
373Issue
2Collections
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