The triple Si delta-doped GaAs structure

Abstract

For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To find the subband structure of the triple delta-doped quantum well we have solved self-consistently both Schrodinger and Poisson equations. From our calculations, we have seen that the electronic properties of triple Si delta-doped GaAs structure depend strongly on the spacer thickness between the adjacent two doping layers. In this study, we can estimate that the mobility in closely spaced triple delta-doped GaAs structures is very high compared to single delta-doped structures because of the overlap between the electron wave function and the ionized scattering centres in single delta-doped structures.