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dc.contributor.authorOzturk, E
dc.contributor.authorSari, H
dc.contributor.authorSokmen, I
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:22:31Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:22:31Z
dc.date.issued2004
dc.identifier.issn0038-1098
dc.identifier.urihttps://dx.doi.org/10.1016/j.ssc.2004.05.019
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11145
dc.descriptionWOS: 000224867300014en_US
dc.description.abstractThe intersubband absorption in square and graded quantum wells under a laser field is calculated within the framework of the effective mass approximation. We conclude that, for quantum wells with different shapes, the laser field amplitude induces an important effect on the electronic and optical properties of the semiconductor structure. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons. (C) 2004 Elsevier Ltd. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.ssc.2004.05.019en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectsquare and graded quantum wellsen_US
dc.subjectoptical transitionsen_US
dc.subjectlaser fielden_US
dc.titleThe dependence of the intersubband transitions in square and graded QWs on intense laser fieldsen_US
dc.typearticleen_US
dc.relation.journalSOLID STATE COMMUNICATIONSen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.contributor.authorIDOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.identifier.volume132en_US
dc.identifier.issue7en_US
dc.identifier.endpage502en_US
dc.identifier.startpage497en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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