The photoionization cross-section and binding energy of impurities in quantum wires: Effects of the electric and magnetic field
Abstract
Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the electric and magnetic field as a function of the photon energy. Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on the applied electric and magnetic field, and the impurity position.
Source
SURFACE REVIEW AND LETTERSVolume
11Issue
04.MayCollections
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