| dc.contributor.author | Kasapoglu, E | |
| dc.contributor.author | Sokmen, I | |
| dc.date.accessioned | 2019-07-27T12:10:23Z | |
| dc.date.accessioned | 2019-07-28T10:22:52Z | |
| dc.date.available | 2019-07-27T12:10:23Z | |
| dc.date.available | 2019-07-28T10:22:52Z | |
| dc.date.issued | 2004 | |
| dc.identifier.issn | 0370-1972 | |
| dc.identifier.issn | 1521-3951 | |
| dc.identifier.uri | https://dx.doi.org/10.1002/pssb.200301985 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/11241 | |
| dc.description | WOS: 000220943400013 | en_US |
| dc.description.abstract | The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells under the electric field is calculated by using a variational approach. The results have been obtained in the presence electric field applied along the growth direction as a function of the impurity position, barrier width and the geometric shape of the double quantum wells. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
| dc.relation.isversionof | 10.1002/pssb.200301985 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Shallow donor impurities in different shaped double quantum wells under the electric field | en_US |
| dc.type | article | en_US |
| dc.relation.journal | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | en_US |
| dc.contributor.department | Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkey | en_US |
| dc.identifier.volume | 241 | en_US |
| dc.identifier.issue | 5 | en_US |
| dc.identifier.endpage | 1072 | en_US |
| dc.identifier.startpage | 1066 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
