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dc.contributor.authorKasapoglu, E
dc.contributor.authorGunes, M
dc.contributor.authorSari, H
dc.contributor.authorSokmen, I
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:22:57Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:22:57Z
dc.date.issued2004
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.urihttps://dx.doi.org/10.1142/S0218625X04005810
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11259
dc.descriptionWOS: 000220983700008en_US
dc.description.abstractWe have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga1-chiAlchiAs in effective-mass approximation, using the variational approach. Results obtained show that the exciton binding energies and optical absorption depend on the sizes of the wire and barrier thickness. To the best of our knowledge the exciton binding energy and interband optical absorption in the rectangular coupled quantum wires have not been clarified yet.en_US
dc.language.isoengen_US
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTDen_US
dc.relation.isversionof10.1142/S0218625X04005810en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectexciton binding energyen_US
dc.subjectexciton absorptionen_US
dc.subjectcoupled quantum wiresen_US
dc.titleBarrier thickness dependence of optical absorption of excitons in GaAs coupled quantum wireen_US
dc.typearticleen_US
dc.relation.journalSURFACE REVIEW AND LETTERSen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume11en_US
dc.identifier.issue1en_US
dc.identifier.endpage55en_US
dc.identifier.startpage49en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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