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dc.contributor.authorOzturk, E
dc.contributor.authorErgun, Y
dc.contributor.authorSari, H
dc.contributor.authorSokmen, I
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:23:11Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:23:11Z
dc.date.issued2003
dc.identifier.issn1286-0042
dc.identifier.urihttps://dx.doi.org/10.1051/epjap:2003074
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11312
dc.descriptionWOS: 000186884200002en_US
dc.description.abstractWe have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence of the electric field on the donor distribution thickness as different from other authors. The present method is based on a self-consistent solution of the Schrodinger and Poisson equations. From our calculations, we have seen that a high applied electric field is significantly changed the subband structure of the delta-doped GaAs and the change of the electronic properties as dependent on the applied electric field is more pronounced at wide doping thickness. The high electric fields can induce a spatial separation between confined electrons and ionized dopants in the delta-doped GaAs structure resulting in enhanced free carrier mobility in semiconductor devices.en_US
dc.language.isoengen_US
dc.publisherE D P SCIENCESen_US
dc.relation.isversionof10.1051/epjap:2003074en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleInfluence of an applied electric field on the electronic properties of Si delta-doped GaAsen_US
dc.typearticleen_US
dc.relation.journalEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICSen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.contributor.authorIDOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.identifier.volume24en_US
dc.identifier.issue3en_US
dc.identifier.endpage194en_US
dc.identifier.startpage189en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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