Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum wells under the electric field. The dependence of the ground state impurity binding energy on the applied electric field, the geometric shape of the quantum wells and well width is discussed together with the polarization effect. (C) 2003 Elsevier B.V. All rights reserved.
SourcePHYSICA B-CONDENSED MATTER
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Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential In this work are studied the intense laser effects on the impurity states in GaAs-Ga1- (x) Al (x) As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction ...
Yildiz, A.; Sakiroglu, S.; Dogan, U.; Akgungor, K.; Epik, H.; Sokmen, I.; Sari, H.; Ergun, Y. (WORLD SCIENTIFIC PUBL CO PTE LTD, 2011)A study of variational wave functions for calculation of the ground-state energies of excitons confined in a two-dimensional (2D) disc-like and three-dimensional (3D) spherical parabolic GaAs quantum dots (QDs) is presented. ...
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