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dc.contributor.authorSari, H
dc.contributor.authorKasapoglu, E
dc.contributor.authorSokmen, I
dc.contributor.authorBalkan, N
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:23:31Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:23:31Z
dc.date.issued2003
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.urihttps://dx.doi.org/10.1088/0268-1242/18/6/313
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11385
dc.descriptionWOS: 000183851500018en_US
dc.description.abstractUsing a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external static electric field. We have shown that, in the graded quantum well structures, not only the 'dressed' potential but also the direction of the external electric field parallel to the growth direction play very important roles in the determination of the binding energy and the polarizability of a hydrogenic impurity.en_US
dc.language.isoengen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.isversionof10.1088/0268-1242/18/6/313en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleIntense field effects on shallow donor impurities in graded quantum wellsen_US
dc.typearticleen_US
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkey -- Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, Englanden_US
dc.identifier.volume18en_US
dc.identifier.issue6en_US
dc.identifier.endpage474en_US
dc.identifier.startpage470en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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