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dc.contributor.authorSari, H
dc.contributor.authorKasapoglu, E
dc.contributor.authorSokmen, I
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:23:32Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:23:32Z
dc.date.issued2003
dc.identifier.issn0375-9601
dc.identifier.urihttps://dx.doi.org/10.1016/S0375-9601(03)00456-0
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11388
dc.descriptionWOS: 000182614700008en_US
dc.description.abstractThe laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. We have shown that, not only the 'dressed' potential, but also the shape of the confinement potential, the strength of the external magnetic field parallel to the growth direction, and the impurity position play very important roles in the determining the binding energy of a hydrogenic impurity. (C) 2003 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/S0375-9601(03)00456-0en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectquantum wellsen_US
dc.subjectimpuritiesen_US
dc.subjectintense fielden_US
dc.titleThe effect of an intense laser field on magneto donors in semiconductorsen_US
dc.typearticleen_US
dc.relation.journalPHYSICS LETTERS Aen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume311en_US
dc.identifier.issue1en_US
dc.identifier.endpage66en_US
dc.identifier.startpage60en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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