| dc.contributor.author | Turkoglu, A | |
| dc.contributor.author | Amca, R | |
| dc.contributor.author | Ergun, Y | |
| dc.contributor.author | Sokmen, I | |
| dc.contributor.author | Balkan, N | |
| dc.date.accessioned | 2019-07-27T12:10:23Z | |
| dc.date.accessioned | 2019-07-28T10:23:38Z | |
| dc.date.available | 2019-07-27T12:10:23Z | |
| dc.date.available | 2019-07-28T10:23:38Z | |
| dc.date.issued | 2003 | |
| dc.identifier.issn | 0749-6036 | |
| dc.identifier.uri | https://dx.doi.org/10.1016/S0749-6036(03)00092-2 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/11406 | |
| dc.description | WOS: 000188392100005 | en_US |
| dc.description.abstract | We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field strength but also decreases depending on the magnetic length. We have observed oscillatory behavior of the density of carriers due to the in-plane magnetic field. (C) 2003 Elsevier Ltd. All rights reserved. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
| dc.relation.isversionof | 10.1016/S0749-6036(03)00092-2 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well | en_US |
| dc.type | article | en_US |
| dc.relation.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
| dc.contributor.department | Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuzeylul Univ, Dept Phys, Izmir, Turkey -- Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England | en_US |
| dc.identifier.volume | 33 | en_US |
| dc.identifier.issue | 4 | en_US |
| dc.identifier.endpage | 245 | en_US |
| dc.identifier.startpage | 235 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
